Data Sheet S14288EJ1V0DS

5

µµµµPD16876

ELECTRICAL SPECIFICATIONS

DC Characteristics (Unless otherwise specified, VIN = +5 V, TA = +25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

VCTL = VIN, OUT: Open

1

5

µA

Current consumption

IDD

VCTL = 0 V, OUT: open

80

µA

Input voltage, low

VIL

CTL pin

1.0

V

Input voltage, high

VIH

CTL pin

2.0

V

LATCH input voltage, low

VIL

LATCH pin

1.5

V

LATCH input voltage, high

VIH

LATCH pin

3.5

V

VCTL = 0 V

0.01

1

µA

Control input current

ICTL

VCTL = VIN

0.01

1

µA

TA = 0 to +70

°C,

IOUT = 500 mA

100

140

m

Ω

Output MOSFET on-resistance

RON

VIN = 3 to 5 V, TA = 0 to 70

°C

IOUT = 500 mA

200

m

Ω

Output leakage current

IO LEAK

10

µA

TA = 0 to +70

°C

0.6

0.9

1.25

A

Overcurrent detector threshold

ITH

VIN = 3 to 5 V, TA = 0 to 70

°C

0.5

1.25

A

Flag output resistance

RON F

IL = 10 mA

10

25

Ω

Flag leakage current

IO LEAK F

VFLAG = 5 V

0.01

1

µA

VIN: When rising

2.2

2.5

2.8

V

VIN: When falling

2.0

2.3

2.6

V

Undervoltage lockout circuit

operating voltage

VUVLO

Hysteresis width

0.05

0.25

V

AC Characteristics (Unless otherwise specified, VIN = +5 V, TA = +25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Output transition rise time (ON)

tRISE

RL = 10

Ω per output

2.5

5

8

ms

Output transition fall time (OFF)

tFALL

RL = 10

Ω per output

10

µs

Overcurrent detection delay time

tOVER

20

µs

Overcurrent detection output rise

time

tSRISE

RL = 10

Ω per output

2.5

5

8

ms

Minimum CTL high time

tCTL

CTL : L

→H→L20

µs

CTL

→ FLG Delay time

tC-F Delay

Over Current Detect CTL1

→ FLG4

10

µs