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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AS4CM4EOQ 데이터시트(PDF) 16 Page - Alliance Semiconductor Corporation |
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AS4CM4EOQ 데이터시트(HTML) 16 Page - Alliance Semiconductor Corporation |
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16 / 16 page  AS4C4M4EOQ AS4C4M4E1Q ® 3/22/01; v.1.0 Alliance Semiconductor P. 16 of 16 CAS-before-RAS self refresh cycle Capacitance 15 ƒ = 1 MHz, Ta = Room temperature 4C4M4EOQ ordering information AS4C4M4E1Q ordering information 4C4M4EOQ family part numbering system Parameter Symbol Signals Test conditions Max Unit Input capacitance CIN1 A0 to A9 Vin = 0V 5 pF CIN2 RAS, UCAS, LCAS, WE, OE Vin = 0V 7 pF DQ capacitance CDQ DQ0 to DQ15 Vin = Vout = 0V 7 pF Package \ RAS access time 50 ns 60 ns Plastic SOJ, 300 mil, 24/26-pin 5V 4C4M4EOQ-50JC 4C4M4EOQ-60JC Plastic TSOP, 300 mil, 24/26-pin 5V 4C4M4EOQ-50TC 4C4M4EOQ-60TC Package \ RAS access time 50 ns 60 ns Plastic SOJ, 300 mil, 24/26-pin 5V AS4C4M4E1Q-50JC AS4C4M4E1Q-60JC Plastic TSOP, 300 mil, 24/26-pin 5V AS4C4M4E1Q-50TC AS4C4M4E1Q-60TC AS4 C 4M4 E0 –XX X C DRAM prefix C = 5V CMOS LC = 3.3V CMOS 4M×4 E0=4K refresh E1=2K refresh RAS access time Package: J = SOJ 300 mil, 24/26 T = TSOP 300 mil, 24/26 Commercial temperature range, 0°C to 70 °C tRP tRASS tRPC tCP tCHS tCEZ RAS UCAS, DQ LCAS tRPS tCSR tRPC |
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