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DMN65D8LT 데이터시트(PDF) 2 Page - Diodes Incorporated |
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DMN65D8LT 데이터시트(HTML) 2 Page - Diodes Incorporated |
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2 / 8 page ![]() DMN65D8LT Document number: DS38190 Rev. 3 - 2 2 of 8 www.diodes.com October 2020 © Diodes Incorporated DMN65D8LT Marking Information Date Code Key Year 2014 … 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 Code B … G H I J K L M N O P Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 5.0V Steady State TA = +25°C ID 210 mA TA = +70°C 170 Maximum Continuous Body Diode Forward Current (Note 6) IS 210 mA Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 0.7 A Pulsed Source Current (10µs Pulse, Duty Cycle = 1%) ISM 0.7 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 300 mW Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 426 °C/W Total Power Dissipation (Note 6) PD 360 mW Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 351 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C 58D = Product Type Marking Code YM = Date Code Marking Y or ̅= Year (ex: H = 2020) M = Month (ex: 9 = September) 58D YM |
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