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DMN65D8LT 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 DMN65D8LT
상세설명  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN65D8LT 데이터시트(HTML) 2 Page - Diodes Incorporated

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DMN65D8LT
Document number: DS38190 Rev. 3 - 2
2 of 8
www.diodes.com
October 2020
© Diodes Incorporated
DMN65D8LT
Marking Information
Date Code Key
Year
2014
…
2019
2020
2021
2022
2023
2024
2025
2026
2027
2028
Code
B
…
G
H
I
J
K
L
M
N
O
P
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 5.0V
Steady
State
TA = +25°C
ID
210
mA
TA = +70°C
170
Maximum Continuous Body Diode Forward Current (Note 6)
IS
210
mA
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
0.7
A
Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)
ISM
0.7
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
300
mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
426
°C/W
Total Power Dissipation (Note 6)
PD
360
mW
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
351
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
58D = Product Type Marking Code
YM = Date Code Marking
Y or ̅= Year (ex: H = 2020)
M = Month (ex: 9 = September)
58D
YM



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