DMN65D8LT

Document number: DS38190 Rev. 3 - 2

3 of 8

www.diodes.com

October 2020

© Diodes Incorporated

DMN65D8LT

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60





V

VGS = 0V, ID = 10µA

Zero Gate Voltage Drain Current

IDSS





1.0

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS





±10

µA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1.2



2.0

V

VDS = VGS, ID

= 250μA

Static Drain-Source On-Resistance

RDS(ON)



2.0

5.0

Ω

VGS = 10V, ID = 0.115A

2.2

6.0

VGS = 5V, ID = 0.115A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss



24



pF

VDS = 25V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



2.8



Reverse Transfer Capacitance

Crss



1.8



Gate Resistance

Rg



50



Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge

Qg



0.4



nC

VDD = 30V, VGS = 4.5V, ID = 150mA

Gate-Source Charge

Qgs



0.12



Gate-Drain Charge

Qgd



0.14



Turn-On Delay Time

tD(ON)



2.0



ns

VGS = 10V, VDD = 30V, Rg = 25Ω,

ID = 0.2A

Turn-On Rise Time

tR



1.9



Turn-Off Delay Time

tD(OFF)



9.5



Turn-Off Fall Time

tF



4.3



Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout

6.

Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.