RT4841

6

DS4841-00 May 2021

www.richtek.com

©

Copyright

2021 Richtek Technology Corporation. All rights reserved.

is a registered trademark of Richtek Technology Corporation.

Note 1. Stresses beyond those listed

“Absolute Maximum Ratings” may cause permanent damage to the device. These are

stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in

the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may

affect device reliability.

Note 2.

θJA is measured under natural convection (still air) at TA = 25°C with the component mounted on a high effective-

thermal-conductivity four-layer test board on a JEDEC 51-7 thermal measurement standard.

θJC is measured at the

exposed pad of the package.

Note 3. Devices are ESD sensitive. Handling precaution is recommended.

Note 4. The device is not guaranteed to function outside its operating conditions.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Maximum Duty Cycle

DMAX

--

90

--

%

High Side N-MOS

On-Resistance

HSRDSON

ISW = 500mA

--

80

--

m



Low Side N-MOS

On-Resistance

LSRDSON

ISW = 500mA

--

80

--

m



Current Limit

OCP

5

5.5

--

A

SW Leakage

ILEAK

VSW = 14.4V/0V

--

1

10

A

Line Regulation

9V = VIN = 15.5V, IOUT = 1mA

--

0.04

--

%/V

Load Regulation

1mA = IOUT = 1.5A

--

0.1

--

%/A

Soft Start Charge Current

ISS

--

5

--

A

Over-Voltage Protection

OVP

20

21

22

V

Error Amplifier

Transconductance

Gm

--

100

--

s

Current Sense

Transresistance

RCS

--

0.25

--

V/A

Gate Output High-Level

VgOH

SWO



0.2

SWO

SWO +

0.2

V

Gate Output Low-Level

VgOL

--

SWO



5.8

--

V

Gate Pull-High Resistor

Rswg

8

12

16

k



Gate Sink Current

IG_SINK

6

10

14

A

External Isolation MOSFET

Soft Start Time

tSS_extgd

When external isolation

MOSFET Cgs = 4.7nF

--

2

--

ms