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STI50DE100 데이터시트(PDF) 1 Page - STMicroelectronics |
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STI50DE100 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 11 page ![]() Preliminary Data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. January 2007 Rev 1 1/11 11 Order codes Part Number Marking Package Packing STI50DE100 STI50DE100 I4PAC-4L Tube STI50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT® 1000 V - 50 A - 0.026 Ω General features ■ High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance ■ Very fast-switch up to 150 kHz ■ Ultra low Ciss ■ Low dynamic VCS(ON) Applications ■ Industrial converters ■ Welding Description The STI50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STI50DE100 is designed for use in industrial converters and/or welding equipment. Internal schematic diagrams VCS(ON) IC RCS(ON) 1.3 V 50 A 0.026 W I4PAC-4L 1 2 3 4 www.st.com |
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