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STI50DE100 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STI50DE100
상세설명  Hybrid Emitter Switched Bipolar Transistor ESBT 1000 V - 50 A - 0.026 ohm
PDF  11 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STI50DE100 데이터시트(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STI50DE100
4/11
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICS(SS)
Collector-source current
(VBS = VGS = 0)
VCE = 1000V
100
µA
IBS(OS)
Base-source current
(IC = 0, VGS = 0)
VBS(OS) = 40V
10
µA
ISB(OS)
Source-base current
(IC = 0, VGS = 0)
VSB(OS) = 10V
100
µA
IGS(OS)
Gate-source leakage
VGS = ± 20V
500
nA
VCS(ON)
Collector-source ON
voltage
VGS = 10V IC = 50A IB = 10A
VGS = 10V_IC = 30A IB = 3A
1.3
1.1
V
V
hFE
DC current gain
VGS = 10V_IC = 50A VCS = 1V
VGS = 10V_IC = 30A VCS = 1V
3
6
7
13
VBS(ON) Base Source ON voltage
VGS = 10V_ IC = 50A IB = 10A
VGS = 10V_ IC = 30A_ IB = 3A
2.2
1.4
V
V
VGS(th)
Gate threshold voltage
VBS = VGS ______IB = 250µA
33.7
4.5
V
CISS
Input capacitance
VCS = 25V ______f = 1MHz
VGS = VCB = 0
2500
pF
QGS(tot)
Gate-source charge
VCS = 25V _____VGS = 10V
VCB = 0
IC = 50A
60
nC
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
IC = 25A IB = 5A VGS = 10V
VClamp = 800V RG = 47Ω
tp = 4µs
(see figure 13)
650
10
ns
ns
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
IC = 25A IB = 2.5A VGS = 10V
VClamp = 800V RG = 47Ω
tp = 4µs
(see figure 13)
430
6
ns
ns
VCSW
Maximum collector-
source voltage switched
without snubber
RG = 47Ω hFE = 5A IC = 35A
1000
V
VCS(dyn)
Collector-source
dynamic voltage
(500ns)
VCC = VClamp = 300V VGS = 10V
RG = 47Ω
IC = 5A IB = 5A
IBpeak = IC = 25A
tpeak = 500ns
5.5
V
VCS(dyn)
Collector-source
dynamic voltage
(1 µs)
VCC = VClamp = 300V VGS = 10V
RG = 47Ω
IC = 5A IB = 5A
IBpeak = IC = 25A
tpeak = 500ns
4.8
V



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