M58LR128HT datasheet(53/112 Pages) STMICROELECTRONICS

부품명	M58LR128HT

상세설명	128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories

PDF	112 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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M58LR128HT, M58LR128HB

Program and erase times and endurance cycles

53/112

Program and erase times and endurance cycles

The Program and Erase times and the number of Program/ Erase cycles per block are

shown in Table 17. Exact erase times may change depending on the memory array

condition. The best case is when all the bits in the block are at ‘0’ (pre-programmed). The

worst case is when all the bits in the block are at ‘1’ (not preprogrammed). Usually, the

system overhead is negligible with respect to the erase time. In the M58LR128HT/B the

maximum number of Program/Erase cycles depends on the VPP voltage supply used.

Table 17.

Program/Erase times and endurance cycles(1) (2)

Parameter

Condition

Min

Typ

Typical after

100kW/E

Cycles

Max

Unit

Erase

Parameter Block (16 KWord)

0.4

2.5

Main Block (64

KWord)

Preprogrammed

1.2

Not Preprogrammed

1.5

Program(3)

Single Word

Word Program

180

µs

Buffer Program

180

µs

Buffer (32 Words) (Buffer Program)

384

µs

Main Block (64 KWord)

768

Suspend Latency

Program

µs

Erase

µs

Program/Erase Cycles

(per Block)

Main Blocks

100,000

cycles

Parameter Blocks

100,000

cycles

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