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M25P16-VMF3TP 데이터시트(PDF) 54 Page - STMicroelectronics |
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M25P16-VMF3TP 데이터시트(HTML) 54 Page - STMicroelectronics |
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54 / 55 page ![]() Revision history M25P16 54/55 10-Oct-2006 9 Page Program, Sector Erase and Bulk Erase updated in Features. VIO max modified in Table 9: Absolute maximum ratings. Table 16: AC characteristics (Grade 6, T9HX (0.11µm) technology) added. VFQFPN8 package specifications updated (see Table 18). Note 1 added to Table 19. Note: on page 52 modified. 09-Jan-2006 10 Small text changes. Hardware Write protection added to Features. VCC supply voltage and VSS ground signal descriptions added. Figure 4: Bus master and memory devices on the SPI bus modified, note 2 removed and replaced by an explanatory paragraph. Write In Progress bit behavior specified at Power-up (see Section 7: Power-up and Power- down). TLEAD added to Table 9: Absolute maximum ratings. Grade 3 temperature range added. Table 11: Data retention and endurance and Table 17: AC characteristics (25 MHz operation, Grade 3) added. SO8W and VFQFPN8 package specifications updated (see Section 11: Package mechanical). Table 24. Document revision history (continued) Date Revision Changes |
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