M25P16-VMF3TP datasheet(42/55 Pages) STMICROELECTRONICS

42 / 55 page

DC and AC parameters

M25P16

42/55

tPP

(8)

Page Program cycle time (256 Bytes)

0.64

5ms

Page Program cycle time (n Bytes, where n = 1

to 4)

0.01

Page Program cycle time (n Bytes, where n = 5

to 256)

int(n/8) × 0.02(9)

tSE

Sector erase cycle Time

0.6

tBE

Bulk erase cycle Time

Preliminary data.

Details of how to find the Technology Process in the marking are given in AN1995, see also Section 12:

Part numbering.

Typical values given for TA = 25°C.

tCH + tCL must be greater than or equal to 1/ fC

Value guaranteed by characterization, not 100% tested in production.

Expressed as a slew-rate.

Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.

When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are

obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1

≤n ≤

256)

int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.

Table 16.

AC characteristics (Grade 6, T9HX (0.11µm) technology)(1) (continued)

Applies only to products made with T9HX (0.11µm) Technology, identified with Process digit

“4”(2)

Test conditions specified in Table 10 and Table 12

Symbol Alt.

Parameter

Min.

Typ.(3)

Max.

Unit

M25P16-VMF3TP 데이터시트(PDF) 42 Page - STMicroelectronics

M25P16-VMF3TP 데이터시트(HTML) 42 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55

데이터시트 다운로드

링크 URL