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STM32L010RB 데이터시트(PDF) 49 Page - STMicroelectronics |
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STM32L010RB 데이터시트(HTML) 49 Page - STMicroelectronics |
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49 / 89 page ![]() DS12319 Rev 3 49/89 STM32L010RB Electrical characteristics 82 Figure 10. IDD vs VDD, Low-power run mode executed from RAM, Range 3, MSI at 65 KHz, 0 ws Table 24. Current consumption in Low-power run mode Symbol Parameter Conditions Typ Max(1) Unit IDD (LP run) Supply current in Low-power run mode All peripherals OFF, code executed from RAM, Flash memory switched OFF, VDD from 1.8 V to 3.6 V MSI clock = 65 KHz fHCLK =32 KHz TA = -40 °C to 25 °C 9.5 12 µA TA = 85 °C 14 58 MSI clock = 65 KHz fHCLK =65 KHz TA =-40 °C to 25 °C 15 18 TA = 85 °C 20 60 MSI clock = 131 KHz fHCLK =131 KHz TA = -40 °C to 25 °C 27 30 TA = 55 °C 28 60 TA = 85 °C 31 66 All peripherals OFF, code executed from Flash memory, VDD from 1.8 V to 3.6 V MSI clock = 65 KHz fHCLK =32 KHz TA = -40 °C to 25 °C 25 34 TA = 85 °C 30 82 MSI clock = 65 KHz fHCLK =65 KHz TA = -40 °C to 25 °C 31 40 TA = 85 °C 37 88 MSI clock = 131 KHz fHCLK =131 KHz TA = -40 °C to 25 °C 45 56 TA = 55 °C 48 96 TA = 85 °C 51 110 1. Guaranteed by characterization results, not tested in production, unless otherwise specified. MSv48114V1 |
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