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SST38VF6402 데이터시트(PDF) 35 Page - Microchip Technology |
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SST38VF6402 데이터시트(HTML) 35 Page - Microchip Technology |
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35 / 66 page ![]() ©2015-2018 Microchip Technology Inc DS20005015D 35 64 Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404 Table 24: Program/Erase Cycle Timing Parameters Symbol Parameter Min Max Units TBP Word-Program Time 10 µs TWBP1 Program Buffer-to-Flash Time 40 µs TAS Address Setup Time 0 ns TAH Address Hold Time 30 ns TCS WE# and CE# Setup Time 0 ns TCH WE# and CE# Hold Time 0 ns TOES OE# High Setup Time 0 ns TOEH OE# High Hold Time 10 ns TCP CE# Pulse Width 40 ns TWP WE# Pulse Width 40 ns TWPH2 WE# Pulse Width High 30 ns TCPH2 CE# Pulse Width High 30 ns TDS Data Setup Time 30 ns TDH2 Data Hold Time 0 ns TIDA2 Software ID, Volatile Protect, Non-Volatile Protect, Global Lock Bit, Password mode, Lock Bit, Bypass Entry, and Exit Times 150 ns TSE Sector-Erase 25 ms TBE Block-Erase 25 ms TSCE Chip-Erase 50 ms TBUSY CE# High or WE# High to RY / BY# Low 90 ns T24.0 20005015 1. Effective programming time is 2.5 µs per word if 16-words are programmed during this operation. 2. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. |
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