UTC2SD1664

NPN EPITAXIAL SILICON TRANSISTOR

3

QW-R208-025,A

0.1 0.2

0.5 1

2

0.05

0.01

Figure 9.Safe Operation Area

0.02

510

20

50

0.1

0.2

0.001 0.01

0.1

1

10

1

0.1

Time:t(s)

Figure 10 .Transient Thermal Resistance

100

100

1000

10

1000

-1

20

Figure 7.Gain Bandwidth Product

vs. Emitter Current

50

-2

-5

-20

-50

-10

100

200

-100

Ta=25

℃

0.5

10

Figure 8. Collector Output Capacitance

vs.Collector-base Voltage

20

1

2

10

20

5

50

100

f=1MHz

Ta=25

℃

0.5

1

2

5

Ta=25

℃

*Single pulse

Ta=25

℃

5

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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

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