UTC2SD1664

NPN EPITAXIAL SILICON TRANSISTOR

1

QW-R208-025,A

MEDIUM POWER NPN

TRANSISTOR

DESCRIPTION

The UTC 2SD1664 is an epitaxial planar type NPN silicon

transistor.

FEATURES

*Complement the 2SB1132.

SOT-89

1

1:EMITTER 2:COLLECTOR 3:BASE

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

40

V

Collector-Emitter Voltage

32

V

Emitter-Base Voltage

5

V

1

A

Collector Current

DC

PULSE (Note1)

Ic

2

A

0.5

W

Collector Power Dissipation

Pc

2 (Note2)

W

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note1: Duty=1/2,Pw=20ms

Note2: When mounted on a 40*40*0.7 mm ceramic board.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

Ic= 50μA

40

V

Collector Emitter Breakdown Voltage

Ic= 1mA

32

V

Emitter Base Breakdown Voltage

5

V

Collector Cut-Off Current

0.5

μ

A

Emitter Cut-Off Current

0.5

μ

A

DC Current Transfer Ratio

82

390

Collector-Emitter Saturation Voltage

0.15

0.4

V

Transition Frequency

150

MHz

Output Capacitance

Cob

15

pF

CLASSIFICATION OF hFE

RANK

P

Q

R

RANGE

82-180

120-270

180-390