BT151 datasheet(2/5 Pages) UTC

2 / 5 page

UTC BT151

SCR

UTC UNISONIC TECHNOLOGIES CO., LTD. 2

QW-R301-007,B

THERMAL RESISTANCES

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Thermal resistance Junction to mounting base

Rth j-mb

1.3

K/W

Thermal resistance Junction to ambient

In free air

Rth j-a

K/W

STATIC CHARACTERISTICS(Tj=25°C,unless otherwise stated)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Gate trigger current

IGT

VD = 12 V; IT = 0.1 A

Latching current

VD = 12 V; IGT = 0.1 A

Holding current

VD = 12 V; IGT = 0.1 A

On-state voltage

IT = 23 A

1.4

1.75

Gate trigger voltage

VGT

VD = 12 V; IT = 0.1 A

VD = VDRM(max) ; IT = 0.1 A; Tj = 125 °C

0.25

0.6

0.4

1.5

Off-state leakage current

ID , IR

VD = VDRM(max) ; VR = VRRM(max) ;

Tj = 125 °C

0.1

0.5

DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise stated)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX UNIT

Critical rate of rise of

off-state voltage

dVD /dt

VDM = 67% VDRM(max) ; Tj = 125 °C;

exponential waveform;

Gate open circuit

RGK = 100Ω

200

130

1000

V/µs

Gate controlled turn-on

time

tgt

ITM = 40 A; VD = VDRM(max) ; IG = 0.1 A;

dIG /dt = 5 A/µs

µs

Circuit commutated

Turn-off time

VD = 67% VDRM(max) ; Tj = 125 °C;

ITM = 20 A; VR = 25 V; dITM /dt = 30 A/μs;

dVD /dt = 50 V/μs; RGK = 100 Ω

µs

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