BT151 datasheet(3/5 Pages) UTC

3 / 5 page

UTC BT151

SCR

UTC UNISONIC TECHNOLOGIES CO., LTD. 3

QW-R301-007,B

1ms

100us

10us

1000

T/s

100

10ms

ITSM/A

dIT/dt limit

surge duration /S

IT(RMS)/A

0.01

0.1

Fig.2.Maximum Permissible non-repetitive peak

on-state Current ITSM,versus pulse width tp, for

sinusoidal currents,tp≦10ms

Fig. 5.Maximum permissible repetitive rms on-state

current lT(RMS),versus surge duration,for sinusoidal

currents,f=50HZ;Tmb ≦109℃

time

ITSM

Tj initial=25℃max

Fig.1. Maximum on-state dissipation,P

tot

,versus

average on-state current,I

T(AV)

,where

a=form factor=I

T(RMS)/IT(AV).

IT(RMS)/A

105.5

125

118.5

Ptot/W

Tmb(max)/C

ITSM/A

Fig4.Maximum Permissible non-repetitive peak

on-state current I

TSM,versus number of cycles,for

sinusoidal currents,f=50HZ.

112

2.8

2.2

1.9

a=1.57

conduction

angle

degrees

form

factor

120

180

2.8

2.2

1.9

1.57

100

Number of half cycles at 50Hz

100

time

ITSM

Tj initial=25℃max

120

1000

100

150

-50

1.6

0.8

Tj/℃

1.2

1.4

0.6

0.4

VGT(25℃)

VGT(Tj)

100

150

-50

Tmb/C

IT(RMS)/A

109℃

Fig.3. Maximum permissible rms current lT(RMS),

versus mounting base temperature Tmb

Fig.6. Normalised gate trigger voltage

GT(Tj)/VGT(25℃ ),versus junction temperature Tj.

050

100

150

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