Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT12AI

Fig.9. Typical base-emitter saturation voltage.

V

Fig.10. Typical collector-emitter saturation voltage.

V

Fig.11. Typical base-emitter saturation voltage.

V

Fig.12. Typical collector-emitter saturation voltage.

VCEsat = f(IB); parameter IC

0.1

1

10

1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

0.4

VBEsat / V

IC / A

Tj = 125 C

Tj = 25 C

IC/IB=

8

10

12

0

0.4

0.8

1.2

1.6

2

2.4

1.2

1.1

1

0.9

0.8

0.7

0.6

VBEsat / V

IB / A

Tj = 25 C

Tj = 125 C

IC =

6A

3A

2A

0.1

1

10

10

1

0.1

VCEsat / V

IB / A

Tj = 25 C

Tj = 125 C

IC=2A

4A

6A

0.1

1

10

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

VCEsat / V

IC / A

Tj = 25 C

Tj = 125 C

IC/IB=

12

10

8

5

June 1997

4

Rev 1.000