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MMBT5551-B-AE3-B-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
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MMBT5551-B-AE3-B-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R206-010,D ■ TYPICAL CHARACTERICS Fig.2 DC Current Gain Collector Current, Ic (mA) 10 2 10 1 10 0 10 3 10 3 10 2 10 1 10 0 10 -1 VCE=5V Fig.3 Base-Emitter on Voltage 10 0 10 1 10 2 Base-Emitter Voltage (V) 0 0.2 0.4 0.6 0.8 1.0 VCE=5V Collector Current, Ic (mA) 10 3 10 2 10 1 10 0 10 -1 Fig.4 Saturation Voltage Fig.5 Current Gain -Bandwidth Product Fig.1 Collector Output Capacitance VCE(SAT ) VBE(SAT) Ic=10*IB Collector Current, Ic (mA) 10 0 10 1 10 2 10 3 10 0 10 1 10 2 VCE=10V Collector-Base Voltage (V) 10 3 10 0 10 1 10 2 0 2 4 6 8 10 f=1MHz IE=0 10 3 10 1 10 0 10 -1 10 -2 |
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