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MMBT5551-B-AE3-B-R 데이터시트(PDF) 1 Page - Unisonic Technologies |
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MMBT5551-B-AE3-B-R 데이터시트(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page ![]() UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw 1 of 4 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R206-010,D HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain SOT-23 1 2 3 *Pb-free plating product number:MMBT5551L ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R SOT-23 E B C Tape Reel MMBT5551L-x-AE3-6-R (1)Packing Type (3)Package Type (4)Rank (5)Lead Plating (2)Pin Assignment (1) R: Tape Reel (2) refer to Pin Assignment (3) AE3: SOT-23 (4) x: refer to Classification of hFE (5) L: Lead Free Plating, Blank: Pb/Sn MARKING G1 |
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