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BYD127 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BYD127 데이터시트(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1999 Nov 15 2 Philips Semiconductors Product specification Ultra fast low-loss rectifier BYD127 FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack • Smallest surface mount rectifier outline. DESCRIPTION Cavity free cylindrical glass SOD87 package through Implotec ™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. handbook, 4 columns MAM061 ka Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 200 V VR continuous reverse voltage − 200 V IF(AV) average forward current Ttp = 145 °C; averaged over any 20 ms period; see Figs 5 and 6 − 1A Ttp =95 °C; averaged over any 20 ms period; see Figs 5 and 6 − 2A IFSM non-repetitive peak forward current t = 10 ms half sinewave; VR =VRRMmax − 25 A Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 1 A; see Fig.2; Tj = 150 °C; 0.8 V IF = 1 A; see Fig.2 0.93 V IR reverse current VR =VRRMmax; see Fig.3 2 µA VR =VRRMmax; Tj = 150 °C; see Fig.3 50 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A 25 ns |
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