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AT83SND1CXXX-ROTUL 데이터시트(PDF) 17 Page - ATMEL Corporation |
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AT83SND1CXXX-ROTUL 데이터시트(HTML) 17 Page - ATMEL Corporation |
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17 / 212 page ![]() 1 4109J–8051–10/06 AT8xC51SND1C 6. Program/Code Memory The AT8xC51SND1C execute up to 64K Bytes of program/code memory. Figure 6-1 shows the split of internal and external program/code memory spaces depending on the product. The AT83SND1C product provides the internal program/code memory in ROM memory while the AT89C51SND1C product provides it in Flash memory. These 2 products do not allow exter- nal code memory execution. External code memory execution is achieved using the AT80C51SND1C product which does not provide any internal program/code memory. The Flash memory increases EPROM and ROM functionality by in-circuit electrical erasure and programming. The high voltage needed for programming or erasing Flash cells is generated on- chip using the standard V DD voltage, made possible by the internal charge pump. Thus, the AT89C51SND1C can be programmed using only one voltage and allows In-application software programming. Hardware programming mode is also available using common programming tools. See the application note ‘Programming T89C51x and AT89C51x with Device Programmers’. The AT89C51SND1C implements an additional 4K Bytes of on-chip boot Flash memory pro- vided in Flash memory. This boot memory is delivered programmed with a standard boot loader software allowing In-System Programming (ISP). It also contains some Application Program- ming Interface routines named API routines allowing In Application Programming (IAP) by using user’s own boot loader. Figure 6-1. Program/Code Memory Organization 6.1 ROMLESS Memory Architecture As shown in Figure 6-2 the AT80C51SND1C external memory is composed of one space detailed in the following paragraph. 4K Bytes Boot Flash FFFFh F000h 0000h 64K Bytes Code Flash FFFFh AT89C51SND1C 0000h 64K Bytes Code ROM FFFFh AT83SND1C F000h 0000h 64K Bytes External Code FFFFh AT80C51SND1C |
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