56F803 datasheet(29/57 Pages) FREESCALE

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56F803 Technical Data, Rev. 16

Freescale Semiconductor

Defines program cycle

Defines erase cycle

Defines mass erase cycle, erase whole block

Defines non-volatile store cycle

Table 3-6 IFREN Truth Table

Mode

IFREN = 1

IFREN = 0

Read

Read information block

Read main memory block

Word program

Program information block

Program main memory block

Page erase

Erase information block

Erase main memory block

Mass erase

Erase both block

Erase main memory block

Table 3-7 Flash Timing Parameters

Operating Conditions: V

SS = VSSA = 0 V, VDD = VDDA = 3.0–3.6V, TA = –40° to +85°C, CL ≤ 50pF

Characteristic

Symbol

Min

Typ

Max

Unit

Figure

Program time

Tprog*

–

Figure 3-4

Erase time

Terase*

–

Figure 3-5

Mass erase time

Tme*

100

–

Figure 3-6

Endurance1

ECYC

10,000

20,000

–

cycles

Data Retention1

DRET

–

years

The following parameters should only be used in the Manual Word Programming Mode

PROG/ERASE to NVSTR set up time

Tnv*

–5

–

Figure 3-4,

Figure 3-5,

Figure 3-6

NVSTR hold time

Tnvh*

–5

–

Figure 3-4,

Figure 3-5

NVSTR hold time (mass erase)

Tnvh1*

–

100

–

Figure 3-6

NVSTR to program set up time

Tpgs*

–10

–

Figure 3-4

Recovery time

Trcv*

–1

–

Figure 3-4,

Figure 3-5,

Figure 3-6

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