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MCC56-12IO1B 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MCC56-12IO1B 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() ISTM4006 eq MCC56-12io1B Thyristor-Thyristor Module www.iscsemi.com 2 SYMBOL PARAMETER VALUE UNIT dv/dt ( cr) TVJ=TVJM VD=2/3VDRM RGK= ∞ ; method 1 (linear voltage rise 1000 V/us PGM PGAVM TVJ=TVJM tp=30us IT=ITAVM tp=300us 10 5 W Tvj virtual junction temperature -40 ~+125 ℃ TvjM Max virtual junction temperature 125 ℃ Tstg Storage temperature -40 ~+125 ℃ VISOL isolation voltage 50/60Hz, RMS t = 1min IISOL<1mA t = 1s 3000 3600 V~ Tj Operating Junction temperature -40 ~+125 ℃ Tstg Storage temperature -40 ~+150 ℃ Rth j-c per thyristor/diode; DC current per module 0.45 0.225 K/W Rth j-h per thyristor/diode; DC current per module 0.65 0.325 Md Mounting torque (M5) Terminal connection torque (M5) 2.5-4.0/22-35 2.5-4.0/22-35 Nm/lb.in. Weight typical 81 g ds Creeping distance on surface 12.7 mm da Creepage distance in air 9.6 mm a Max. allowable acceleration 50 m/s2 |
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