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MCC56-12IO1B 데이터시트(PDF) 3 Page - Inchange Semiconductor Company Limited

부품명 MCC56-12IO1B
상세설명  Thyristor-Thyristor Module
PDF  4 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MCC56-12IO1B 데이터시트(HTML) 3 Page - Inchange Semiconductor Company Limited

  MCC56-12IO1B Datasheet HTML 1Page - Inchange Semiconductor Company Limited MCC56-12IO1B Datasheet HTML 2Page - Inchange Semiconductor Company Limited MCC56-12IO1B Datasheet HTML 3Page - Inchange Semiconductor Company Limited MCC56-12IO1B Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISTM4006
eq MCC56-12io1B
Thyristor-Thyristor Module
www.iscsemi.com
3
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
IRRM
Repetitive peak reverse current
TVJ=TVJM; VR=VRRM; VD=VDRM
--
--
5
mA
IDRM
Repetitive peak off-state current TVJ=TVJM; VR=VRRM; VD=VDRM
--
--
5
mA
VTM
On-state voltage
ITM= 200A
--
--
1.57
V
VTO
threshold voltage For power-loss calculations only
--
--
0.85
V
rT
slope resistance For power-loss calculations only
--
--
3.7
mΩ
IGT
Gate-trigger current
VD=6V;TVJ=25℃
--
--
100
mA
IGT
Gate-trigger current
VD=6V;TVJ=40℃
--
--
200
mA
VGT
Gate-trigger voltage
VD=6V;TVJ=25℃
--
--
1.5
V
VGT
Gate-trigger voltage
VD=6V;TVJ=40℃
--
--
1.6
V
VGD
gate non-trigger voltage
VD=2/3VDRM
--
--
0.2
V
IGD
gate trigger current
VD=2/3VDRM
--
--
10
mA
IL
latching current
TVJ=25℃; tp=10us
IG=0.45A; diG/dt=0.45A/us
--
--
450
mA
IH
Holding current
VD=6V;TVJ=25℃
--
--
200
mA
tgd
gate controlled delay time
TVJ=25o C; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
--
--
2
us
tq
turn-off time
TVJ=TVJM; IT=150A; tp=200us;
di/dt=-10A/us
VR=100V; dv/dt=20V/us;
VD=2/3VDRM
--
150



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