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AM29LV040B 데이터시트(PDF) 31 Page - Advanced Micro Devices |
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AM29LV040B 데이터시트(HTML) 31 Page - Advanced Micro Devices |
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31 / 37 page ![]() October 11, 2006 21354E4 Am29LV040B 31 D A TA SH EE T AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter Speed Options JEDEC Std Description -60R -70 -90 -120 Unit tAVAV tWC Write Cycle Time (Note 1) Min 60 70 90 120 ns tELAX tAH Address Hold Time Min 45454550 ns tDVEH tDS Data Setup Time Min 35354550 ns tELEH tCP CE# Pulse Width Min 35 35 35 50 ns tAVEL tAS Address Setup Time Min 0 ns tEHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tEHEL tCPH CE# Pulse Width High Min 30 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.7 sec |
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