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AM29BDS643G 데이터시트(PDF) 39 Page - Advanced Micro Devices

부품명 AM29BDS643G
상세설명  64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  49 Pages
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29BDS643G 데이터시트(HTML) 39 Page - Advanced Micro Devices

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May 8, 2006 25692A2
Am29BDS643G
37
D A TA
SH EE T
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
3. Does not include the preprogramming time.
Parameter
Description
7G/7M
5K
Unit
JEDEC
Standard
tAVAV
tWC
Write Cycle Time (Note 1)
Min
80
45
ns
tAVWL
tAS
Address Setup Time
Min
5
4
ns
tWLAX
tAH
Address Hold Time
Min
7
6
ns
tAVDP
AVD# Low Time
Min
12
11
ns
tDVWH
tDS
Data Setup Time
Min
45
25
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write
Typ
0
ns
tELWL
tCS
CE# Setup Time
Typ
0
ns
tWHEH
tCH
CE# Hold Time
Typ
0
ns
tWLWH
tWP/tWRL
Write Pulse Width
Typ
50
25
ns
tWHWL
tWPH
Write Pulse Width High
Typ
30
20
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
11.5
µs
tWHWH1
tWHWH1
Accelerated Programming Operation (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Notes 2, 3)
Typ
0.4
sec
tVPP
VPP Rise and Fall Time
Min
500
ns
tVPS
VPP Setup Time (During Accelerated Programming)
Min
1
µs
tVCS
VCC Setup Time
Min
50
µs



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