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M700000002 데이터시트(PDF) 114 Page - SPANSION

부품명 M700000002
상세설명  2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
PDF  128 Pages
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M700000002 데이터시트(HTML) 114 Page - SPANSION

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112
Am70PDL127BDH/Am70PDL129BDH
November 25, 2003
AD VAN C E
INFORM ATION
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
6. AC Specifications listed are tested with V
IO = VCC. Contact AMD for information on AC operation with VIO
≠ V
CC.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
110
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
352
µs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Byte
Typ
11
µs
Per Word
Typ
22
µs
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Byte
Typ
8.8
µs
Per Word
Typ
17.6
µs
Single Word/Byte Program
Operation (Note 2, 5)
Byte
Typ
100
µs
Word
100
Single Word/Byte Accelerated
Programming Operation (Note 2, 5)
Byte
Typ
90
Word
90
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
VHH
V
HH Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC Setup Time (Note 1)
Min
50
µs
t
BUSY
WE# High to RY/BY# Low
Min
110
ns



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