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M750000004 데이터시트(PDF) 92 Page - SPANSION

부품명 M750000004
상세설명  128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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90
Am75PDL191CHHa/Am75PDL193CHHa
January 14, 2004
ADV ANCE
I N FO RMAT I O N
Table 7.
CFI Query Identification String
Table 8.
System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
1Bh
36h
0027h
V
CC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
V
CC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
V
PP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
V
PP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2
N µs
20h
40h
0000h
Typical timeout for Min. size buffer write 2
N
µs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2
N ms
22h
44h
0000h
Typical timeout for full chip erase 2
N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2
N times typical
24h
48h
0000h
Max. timeout for buffer write 2
N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2
N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2
N times typical (00h = not supported)



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