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M750000004 데이터시트(PDF) 20 Page - SPANSION |
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M750000004 데이터시트(HTML) 20 Page - SPANSION |
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20 / 129 page ![]() 18 Am75PDL191CHHa/Am75PDL193CHHa January 14, 2004 ADV ANCE I N FO RMAT I O N Table 1. Device Bus Operations Legend: L = Logic Low = V IL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SADD = Flash Sector Address, AIN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Other operations except for those indicated in this column are inhibited. 2. Do not apply CE#f1 or 2 = V IL, CE#1ps = VIL and CE2ps = VIH at the same time. 3. Don’t care or open LB#s or UB#s. 4. If WP#/ACC = V IL, the boot sectors will be protected. If WP#/ACC = V IH the boot sectors protection will be removed. If WP#/ACC = VACC (9V), the program time will be reduced by 40%. 5. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector Block Protection and Unprotection” section. 6. If WP#/ACC = V IL, the two outermost boot sectors remain protected. If WP#/ACC = V IH, the two outermost boot sector protection depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. If WP#/ACC = V HH, all sectors will be unprotected. 7. Data will be retained in pSRAM. 8. Data will be lost in pSRAM. 9. Both CE#f1 inputs may be held low for this operation. Operation (Notes 1, 2) CE#f1 Active CE#f2 (PDL129 only) CE#1ps CE2ps OE# WE# Addr. LB#s (Note 3) UB#s (Note 3) RESET# WP#/ ACC (Note 4) DQ7– DQ0 DQ15– DQ8 Read from Active Flash (Note 7) L (H) H (L) HH LH AIN XX H L/H DOUT DOUT (Note 8) H L Write to Active Flash (Note 7) L (H) H (L) HH HL A IN XX H (Note 4) D IN D IN (Note 8) H L Standby V CC ± 0.3 V HH X X X X X V CC ± 0.3 V H High-Z High-Z Deep Power-down Standby VCC ± 0.3 V HL X X X X X V CC ± 0.3 V H High-Z High-Z Output Disable (Note 9) L (H) H (L) L H HH X X X H L/H High-Z High-Z HH X X X Flash Hardware Reset (Note 7) X HH X X X X X L L/H High-Z High-Z (Note 8) H L Sector Protect (Notes 6, 10) (Note 7) L (H) H (L) HH HL SADD, A6 = L, A1 = H, A0 = L XX VID L/H DIN X (Note 9) H L Sector Unprotect (Notes 5, 9) (Note 7) L (H) H (L) HH HL SADD, A6 = H, A1 = H, A0 = L XX V ID (Note 6) D IN X (Note 8) H L Temporary Sector Unprotect (Note 7) X HH XX X X X V ID (Note 6) D IN High-Z (Note 8) H L Read from pSRAM H H L H L H A IN LL HX D OUT D OUT H L High-Z D OUT LH D OUT High-Z Write to pSRAM H H L H X L A IN LL HX D IN D IN H L High-Z D IN LH D IN High-Z |
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