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ISCD7007 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCD7007 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() ISCD7007 eq IDW40G65C5B Silicon Carbide Schottky Diode www.iscsemi.com 1 FEATURES · Revolutionary semiconductor material - Silicon Carbide · High surge current capability · Optimized for high temperature operation · Benchmark switching behavior · No reverse recovery APPLICATIONS · Solar inverter · Power factor correction · Switch mode power supply ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Repetitive Peak Reverse Voltage 650 V IF Continuous Forward Current TC< 120°C 20*2 A IFSM Non-Repetitive Forward Surge Current Per Leg TC= 25°C,tp= 10ms,Sine halfwave 103 A TC= 150°C,tp= 10ms,Sine halfwave 87 IF,max Non-repetitive peak forward current Per Leg TC= 25°C,Tp= 10us,Sine halfwave 776 A Ptot Power Dissipation Tc=25°C 112 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.3 ℃ /W |
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