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N2NE10L 데이터시트(PDF) 1 Page - STMicroelectronics |
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N2NE10L 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() February 2007 Rev 5 1/12 12 STN2NE10L N-channel 100V - 0.33 Ω -2A - SOT-223 STripFET™ Power MOSFET General features ■ Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application Internal schematic diagram Type VDSS (@Tjmax) RDS(on) ID STN2NE10L 100V <0.4 Ω 1.8A SOT-223 1 2 2 3 www.st.com Order codes Part number Marking Package Packaging STN2NE10L N2NE10L SOT-223 Tape & reel |
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