N2NE10L datasheet(3/12 Pages) STMICROELECTRONICS

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STN2NE10L

Electrical ratings

3/12

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

100

VGS

Gate-source voltage

± 20

Drain current (continuous) at TC = 25°C

1.8

Drain current (continuous) at TC=100°C

1.3

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

7.2

PTOT

Total dissipation at TC = 25°C

2.5

Derating factor

0.02

W/°C

dv/dt (2)

ISD ≤7.2 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, TJ ≤TJMAX

Peak diode recovery voltage slope

V/ns

Tstg

Operating junction temperature

Storage temperature

150

-65 to 150

°C

Table 2.

Thermal data

Rthj-pcb

Thermal resistance junction-PC Board max

°C/W

Rthj-amb

Thermal resistance junction-ambient max

°C/W

Maximum lead temperature for soldering

purpose

260

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

1.8

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=25V)

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