1998 May 18

2

Philips Semiconductors

Product specification

NPN resistor-equipped transistor

PDTC114TS

FEATURES

• Built-in bias resistor R1 (typ. 10 kΩ)

• Simplification of circuit design

• Reduces number of components

and board space.

APPLICATIONS

• Especially suitable for space

reduction in interface and driver

circuits

• Inverter circuit configurations

without use of an external resistor.

DESCRIPTION

NPN resistor-equipped transistor in a

TO-92; SOT54 plastic package.

PNP complement: PDTA114TS.

PINNING

PIN

DESCRIPTION

1

base/input

2

collector/output

3

emitter/ground

Fig.1 Simplified outline (TO-92; SOT54) and symbol.

handbook, halfpage

MAM361

1

2

3

2

3

1

R1

Fig.2

Equivalent inverter

symbol.

MGL136

1

2

3

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector-emitter voltage

open base

−−

50

V

output current (DC)

−−

100

mA

peak collector current

−−

100

mA

total power dissipation

−−

500

mW

DC current gain

200

−−

R1

input resistor

7

10

13

k

Ω