PDTC114TS datasheet(3/8 Pages) PHILIPS

3 / 8 page

1998 May 18

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped transistor

PDTC114TS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

output current (DC)

−

100

ICM

peak collector current

−

100

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

500

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =50V

−−

100

ICEO

collector cut-off current

IB = 0; VCE =30V

−−

µA

IB = 0; VCE =30V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC = 1 mA; VCE = 5 V

200

−−

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−−

150

input resistor

Ω

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−−

2.5

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