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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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FDN304P 데이터시트(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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FDN304P 데이터시트(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 5 page  1 2 Gate Source Drain 3 FDN304P P-Channel MOSFET 1 2 3 ■ Simplified outline(SOT-23) 1. Gate 2. Source 3. Drain ■ Features ● ● ● ■ Applications ● ■ Absolute Maximum Ratings Ta = 25℃ 1 –2.4 A, –20 V. RDS(ON) = 0.052 Ω @ VGS = –4.5 V RDS(ON) = 0.070 Ω @ VGS = –2.5 V RDS(ON) = 0.100 Ω @ VGS = –1.8 V Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOT TM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint ● • Battery management • Load switch • Battery protection Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current – Continuous (Note 1a) –2.4 A – Pulsed –10 Maximum Power Dissipation (Note 1a) 0.5 PD (Note 1b) 0.46 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W ■ Thermal Characteristics Rev:2022A2 |
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