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FDN304P 데이터시트(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

부품명 FDN304P
상세설명  P-Channel MOSFET
PDF  5 Pages
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제조업체  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
홈페이지  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

FDN304P 데이터시트(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

  FDN304P Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED FDN304P Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED FDN304P Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED FDN304P Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED FDN304P Datasheet HTML 5Page - EVER SEMICONDUCTOR CO.,LIMITED  
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Electrical Characteristics Ta = 25℃
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250
µA
–20
V
∆BVDSS
===∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250
µA,Referenced to 25°C
–13
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250
µA
–0.4
–0.8
–1.5
V
∆VGS(th)
===∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250
µA,Referenced to 25°C
3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
ID = –2.4 A
VGS = –2.5 V,
ID = –2.0 A
VGS = –1.8V,
ID = –1.8 A
0.036
0.047
0.065
0.052
0.070
0.100
Ω
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–10
A
gFS
Forward Transconductance
VDS = –5 V,
ID = –1.25 A
12
S
Dynamic Characteristics
Ciss
Input Capacitance
1312
pF
Coss
Output Capacitance
240
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
106
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
15
27
ns
tr
Turn–On Rise Time
15
27
ns
td(off)
Turn–Off Delay Time
40
64
ns
tf
Turn–Off Fall Time
VDD = –10 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6
Ω
25
40
ns
Qg
Total Gate Charge
12
20
nC
Qgs
Gate–Source Charge
2
nC
Qgd
Gate–Drain Charge
VDS = –10 V,
ID = –2.4 A,
VGS = –4.5 V
2nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.42
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –0.42
(Note 2)
–0.6
–1.2
V
Notes:
1.
R
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250
°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤=300 µs, Duty Cycle ≤=2.0%
2
FDN304P
Rev:2022A2



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