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FDN358P 데이터시트(PDF) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

부품명 FDN358P
상세설명  P−CHANNEL MOSFET
PDF  5 Pages
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제조업체  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
홈페이지  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

FDN358P 데이터시트(HTML) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

  FDN358P Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED FDN358P Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED FDN358P Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED FDN358P Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED FDN358P Datasheet HTML 5Page - EVER SEMICONDUCTOR CO.,LIMITED  
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Typical Characteristics
0
1
2
3
4
5
00.511.5
22.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS=-10V
-4.5V
-3.5V
-3.0V
-6.0V
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
01
2345
-ID, DRAIN CURRENT (A)
V
GS=-4.0V
-10V
-6.0V
-5.0V
-7.0V
-4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
oC)
I
D = -1.5A
V
GS = -10V
0
0.1
0.2
0.3
0.4
24
68
10
-VGS, GATE TO SOURCE VOLTAGE (V)
I
D = -0.75A
TA = 125
oC
T
A = 25
oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
-VGS, GATE TO SOURCE VOLTAGE (V)
T
A = -55
oC
25
oC
125
oC
V
DS = -5V
0.0001
0.001
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
V
GS = 0V
TA = 125
oC
25
oC
-55
oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Rev:2023A2
3
FDN358
P−CHANNEL MOSFET



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