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FDN359B 데이터시트(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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FDN359B 데이터시트(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 6 page ![]() General Description This N-Channel Logic Level MOSFET is produced using process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. D S G Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current – Continuous (Note 1a) 2.7 ID – Pulsed 15 A Maximum Power Dissipation (Note 1a) 0.5 PD (Note 1b) 0.46 W TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W N-Channel 30 V (D-S) MOSFET FDN359B SOT–23 1. GATE 2. SOURCE 3. DRAIN Rev:2023A2 1 Features VDS (V) = 30V RDS(ON) 46m (VGS = 10V) RDS(ON) 60m (VGS = 4.5V) |
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