FDN359B datasheet(2/6 Pages) EVVOSEMI

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Electrical Characteristics

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = 250 µA

∆BVDSS

∆T

Breakdown Voltage Temperature

Coefficient

ID = 250 µA,Referenced to 25°C

mV/

°C

VDS = 24 V,

VGS = 0 V

µA

IDSS

Zero Gate Voltage Drain Current

TJ = -55

µA

IGSS

Gate–Body Leakage

VGS = ±20 V,

VDS = 0 V

±100

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = 250 µA

1.8

∆VGS(th)

∆T

Gate Threshold Voltage

Temperature Coefficient

ID = 250 µA,Referenced to 25°C

–4

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = 10 V,

ID = 2.7 A

VGS = 4.5 V,

ID = 2.4 A

m Ω

ID(on)

On–State Drain Current

VGS = 10 V,

VDS = 5 V

gFS

Forward Transconductance

VDS = 5V,

ID = 2.7 A

Dynamic Characteristics

Ciss

Input Capacitance

485

650

Coss

Output Capacitance

105

140

Crss

Reverse Transfer Capacitance

VDS = 15 V,

V GS = 0 V,

f = 1.0 MHz

100

Gate Resistance

f = 1.0 MHz

1.8

Ω

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

Turn–On Rise Time

td(off)

Turn–Off Delay Time

Turn–Off Fall Time

VDD = 15V,

ID = 1 A,

VGS = 10 V,

RGEN = 6 Ω

Total Gate Charge

Qgs

Gate–Source Charge

1.3

Qgd

Gate–Drain Charge

VDS = 15 V,

ID = 2.7 A,

VGS = 5 V

1.8

Rev:2023A2

N-Channel 30 V (D-S) MOSFET

FDN359B

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