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SA1921 데이터시트(PDF) 8 Page - NXP Semiconductors |
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SA1921 데이터시트(HTML) 8 Page - NXP Semiconductors |
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8 / 36 page ![]() Philips Semiconductors Product specification SA1921 Satellite and cellular dual-band RF front-end 1999 Mar 02 8 AC ELECTRICAL CHARACTERISTICS Low-Band, Dual Mode of Operation VCC = +3.75 V, FreqRF = 943 MHz, FreqLO = 1106 MHz, PLOin = –3 dBm, TA = +25_C; unless otherwise stated. PARAMETERS Min –3 s TYP +3 s Max UNITS NOTES System RF Input Frequency Range 869 943 960 MHz IF Frequency 163 MHz LO Frequency 1032 1106 1123 MHz Cascaded Power Gain; includes 3dB filter loss 21.4 22.5 23.6 dB Power Gain Reduction (Strong Signal Mode—LNA Off) 30 36 42 dB Cascaded Noise Figure; includes 3dB filter loss 2.6 dB LNA LNA Gain 17.6 18.3 19 dB LNA IIP3 (60 kHz spacing) –6.0 –5.0 –4.0 dBm LNA IIP3 (200 kHz spacing) –3.0 dBm LNA Noise Figure 1.6 1.7 1.8 dB LNA 1 dB RF Input Compression Point –21.0 dBm Mixer Mixer Gain 6.9 7.2 7.5 dB Mixer IIP3 (60 kHz spacing) 4.0 5.0 6.0 dBm Mixer Noise Figure 10.4 11.0 11.6 dB Mixer 1 dB RF Input Compression Point –13.0 dBm Other Input Impedance, RF Port 50 W Return Loss at LNA Inputs and Output –10 dB 1 Return Loss at Mixer Input and Outputs –10 dB 1 LO leakage at RF Port –42 dBm LO Input Power –5 –3 –1 dBm Turn ON/OFF Time 100 msec Low-Band LO Buffer VCC = +3.75 V, FreqLO = 1106 MHz, PLOin = –3 dBm, TA = +25_C; unless otherwise stated. PARAMETERS Min –3 s TYP. +3 s Max UNITS NOTES LO Frequency 1032 1106 1123 MHz Differential Output Power –7 dBm Differential Output Impedance 100 W Harmonic Content –20 dBc Input Power –5 –3 –1 dBm Input Impedance 50 W 1 Turn On/Off Time 10 msec NOTE: 1. External matching network is required. |
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