SA1921 datasheet(9/36 Pages) PHILIPS

9 / 36 page

Philips Semiconductors

Product specification

SA1921

Satellite and cellular dual-band RF front-end

1999 Mar 02

AC ELECTRICAL CHARACTERISTICS

High-Band, Single Mode of Operation

LNA and Image Reject Mixer

VCC = +3.75 V, FreqRF = 1550 MHz, FreqLO = 1713 MHz, PLOin = –3 dBm, TA = +25_C; unless otherwise stated.

PARAMETERS

MIN

–3

TYP.

MAX

UNITS

NOTES

RF Input Frequency Range

1515

1600

MHz

IF Frequency

150

163

185

MHz

LO Frequency

1665

1785

MHz

Power Gain

21.5

22.2

22.9

Power Gain Reduction (Strong Signal Mode—LNA Off)

Noise Figure

3.7

3.9

4.1

Input Impedance, RF Port

Return Loss at Inputs

–10

LO leakage at RF Port

–48

dBm

1 dB RF Input Compression Point

–24

dBm

IP3 (3RD Order Intermodulation Product)

Referred to the RF Input Port

–14

–11.5

–9

dBm

(2 x LO) – (2 x RF) Spur Performance

–50 dBm IN Referred to RF Input Port

–62

dBc

50 dBm IN Referred to RF In ut Port

Measure at LO = 1688 MHz and RF = 1606 MHz

(3 x LO) – (3 x RF) Spur Performance.

–50 dBm IN Referred to RF Input Port.

Measure at LO = 1688 MHz and RF = 1634 MHz.

–102

dBc

Image rejection, fRX+2fIF

Referred to the RF Input Port

31.5

36.5

LO Input Power

–5

–3

–1

dBm

Turn ON/OFF Time

msec

High-Band LO Buffer

VCC = +3.75 V, FreqLO = 1713 MHz, PLOin = –3 dBm, TA = +25_C; unless otherwise stated.

PARAMETERS

MIN

–3

TYP.

MAX

UNITS

NOTES

LO Frequency Range

1665

1785

MHz

Differential Output Power

–9

dBm

Differential Output Impedance

100

Harmonic Content

–20

dBc

Input Power

–5

–3

–1

dBm

Input Impedance

Turn On/Off Time

msec

NOTE:

1. External matching network is required.

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