Philips Semiconductors

Product specification

SA910

Variable gain RF predriver amplifier

1997 Aug 12

5

C13 0.

SR01548

SA 910

ON–CHIP

EXTERNAL

AMP

PSENSE

RFOUT1

GND

RFOUT2

BIASOUT

OFFSET

PWRUP

VCC1

VREF

OUTLPF

RFIN

GND

VC

VCCBIAS

VCC1

C28

0.1uF

C23

0.001uF

VREF

C27

0.001uF

1000pf

VCC1

C14

0.1uF

R15 1K

VPWRUP

C24

0.001uF

C21

0.1uF

C26

0.001uF

L3 1.8nH

C20

0.001uF

C25

0.1uF

L1 33nH

C6 3.3pF

L4 3.9nH

C7 6.8pF

L2 5.6nH

VCC2

R3 68

R8 16.9

R5 100

R4

100

R9 18

R10 18

ATTENUATOR/SPLITTER

ATTENUATOR/

SPLITTER

0 OHM RES

RFout

130

4.7 uF

0 OHM RESI

VC

R19 10K

C15

0.001uF

C24

0.001uF

R17 10K

RFin

BIAS

BIAS

TO PSENSE

RFOUT

NETWORK

Figure 3. Test Circuit Used In Characterizing SA910

BLOCK DIAGRAM

SR01068

OFFSET

GND

RFOUT2

RFOUT1

A2

A1

VCC1

VCC BIAS

PWRUP

VREF

PSENSE

OUTLPF

BIASOUT

VC

EXTERNAL

AMP BIAS

ON-CHIP

BIAS

GND

RFIN

Figure 4. Block Diagram