Philips Semiconductors

Product specification

SA910

Variable gain RF predriver amplifier

1997 Aug 12

6

PIN DESCRIPTIONS

Pin

No.

Mnemonic

Function

1

Power supply for power sense loop and off-chip bias

2

Power sense reference voltage input

3

GND

Ground

4

Pre-driver input

5

GND

Ground

6

GND

Ground

7

OUTLPF

Power sense detected output

8

GND

Ground

9

VC

Gain control input

10

Power supply for on-chip bias

11

OFFSET

External power amp bias offset adjustment

12

PWRUP

Power-up input

13

GND

Ground

14

Pre-driver output (open collector)

15

GND

Ground

16

GND

Ground

17

Output of first stage (open collector)

18

GND

Ground

19

Output to bias external power amplifier stage

20

Power sense input

ABSOLUTE MAXIMUM RATINGS

SYMBOL

PARAMETER

RATING

UNITS

DC supply voltages

-0.3 to +6.0

V

V

Power dissipation

1.0

W

Input drive power

5

mW

Input detect power

20

mW

Load power

500

mW

Storage temperature range

-65 to +150

NOTE:

RECOMMENDED OPERATING CONDITIONS

SYMBOL

PARAMETER

RATING

UNITS

Supply voltage

3 to 3.6

V

Operating ambient temperature range

-40 to +85

NOTE: