2019/10/2

p.3

EMBA2N10AS

V - Drain-Source Voltage( V )

0

0

10

DS

4

8

5.0V

VGS = 10V

20

30

7.0V

4.5V

12

16

20

On-Region Characteristics

50

40

On-Resistance Variation with Drain Current and Gate Voltage

5.0 V

1.6

0.8

0

1.2

1.0

1.4

8

16

2.2

1.8

2.0

2.4

24

32

7.0 V

10 V

40

I - Drain Current( A )

D

VGS = 4.5 V

On-Resistance Variation with Temperature

T - Junction Temperature (°C)

0.4

-50

0.7

1.0

0

J

-25

25

D

I = 8A

V

= 10V

1.3

1.6

1.9

GS

125

50

75

100

150

On-Resistance Variation with Gate-Source Voltage

TA = 125°C

V - Gate-Source Voltage( V )

0.03

2

0.06

0.12

0.09

GS

4

6

TA = 25°C

0.24

0.18

0.15

0.21

0.27

8

10

ID = 5 A

T = -55°C

V - Gate-Source Voltage( V )

0

5

0

10

1

GS

V = 10V

20

15

25

30

DS

A

3

2

4

25°C

125°C

Transfer Characteristics

Body Diode Forward Voltage Variation with

Source Current and Temperature

25°C

T = 125°C

V - Body Diode Forward Voltage( V )

0.001

0

0.01

0.1

0.4

SD

0.2

0.6

V = 0V

1

10

100

A

GS

1.0

0.8

1.2

-55°C

1.4

TYPICAL CHARACTERISTICS