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EMBA2N10AS 데이터시트(PDF) 4 Page - Excelliance MOS Corp. |
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EMBA2N10AS 데이터시트(HTML) 4 Page - Excelliance MOS Corp. |
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4 / 6 page ![]() 2019/10/2 p.4 EMBA2N10AS Q - Gate Charge( nC ) 0 0 2 4 g 2 4 I = 8A 6 8 10 D 6 8 VDS = 80V Gate Charge Characteristics V - Drain-Source Voltage( V ) 400 0 0 200 DS 20 Crss Coss 600 1000 Ciss 40 60 80 GS f = 1MHz V = 0 V Capacitance Characteristics 100 100 300 500 900 800 700 0 200 100 0.0001 0.001 500 300 400 0.01 0.1 1 Single Pulse RθJC = 2.5 C°/W TC = 25°C Single Pulse Time ( SEC ) Single Pulse Maximum Power Dissipation Maximum Safe Operating Area 1 0.1 10 DS 1 10 100 DC 100 1000 10 0μ s 10 μs 10 0m s 10 ms 1m s V ,Drain-Source Voltage( V ) VGS = 10V Single Pulse RθJC = 2.5°C/W Tc = 25°C R DS (O N) Li m it Notes: 0.1 1 0.01 0.001 1 DM 1 0.2 0.05 0.1 0.1 Duty Cycle = 0.5 0.01 Single Pulse 0.0001 0.02 0.01 0.00001 Transient Thermal Response Curve t ,Time ( SEC ) t1 t2 1.Duty Cycle , D = 2.RθJC = 2.5°C/W 3.TJ - TC = P * RθJC(t) 4.RθJC(t) = r(t) * RθJC |
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