9N70L-TN3-R datasheet(3/8 Pages) UTC

3 / 8 page

9N70-TD2

Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

3 of 8

www.unisonic.com.tw

QW-R205-579.A



ELECTRICAL CHARACTERISTICS (T

J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

700

Drain-Source Leakage Current

IDSS

VDS=700V, VGS=0V

µA

Gate- Source Leakage Current

Forward

IGSS

VGS=+30V, VDS=0V

+100

Reverse

VGS=-30V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

4.0

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=4.0A

1.5

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1MHz

1170

Output Capacitance

COSS

102

Reverse Transfer Capacitance

CRSS

DYNAMIC CHARACTERISTICS

Total Gate Charge

VDS=560V, VGS=10V, ID=8A

IG=1mA (Note 1, 2)

Gate-Source Charge

QGS

5.5

Gate-Drain Charge

QGD

4.5

Turn-on Delay Time (Note 1)

tD(ON)

VDS=100V, VGS=10V, ID=8A,

RG=25Ω (Note 1, 2)

Rise Time

Turn-off Delay Time

tD(OFF)

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Drain-Source Diode Forward Voltage (Note 1)

VSD

IS =9A, VGS=0V

1.4

Body Diode Reverse Recovery Time (Note 1)

trr

IS =9A, VGS=0V,

dIF/dt=100A/μs

468

Body Diode Reverse Recovery Charge

Qrr

3.8

Notes: 1.

Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

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