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9N70L-TN3-R 데이터시트(PDF) 7 Page - Unisonic Technologies |
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9N70L-TN3-R 데이터시트(HTML) 7 Page - Unisonic Technologies |
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7 / 8 page ![]() 9N70-TD2 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw QW-R205-579.A TYPICAL CHARACTERISTICS (Cont.) Gate Threshold Voltage vs. Junction Temperature Junction Temperature, TJ (°C) Source Current vs. Source-Drain Voltage Source-Drain Voltage, VSD (V) Drain Current vs. Gate-Source Voltage Gate-Source Voltage, VGS (V) Drain Current, ID (A) 25°C TA=150°C Drain-Source On-Resistance vs. Drain Current TA=25°C VGS=10V Pulsed TA=25°C Pulsed 0 2 4 6 10 8 ID=0.25mA Pulsed 10 0.1 1 Case Temperature, TC (°C) 75 100 150 125 50 25 Drain Current vs. Case Temperature 25 50 75 100 125 150 0.9 1.1 0.6 1 0.8 0.7 Power Dissipation vs. Junction Temperature Junction Temperature, TJ (°C) 0 25 50 75 100 125 150 TO-251 0.3 0.5 0.7 0.9 1.2 1 0.4 0.6 0.8 1.1 8 6 3 2 0 1 4 7 5 2 1 1.5 0 2 4 6 8 10 12 0 10 20 30 60 50 40 13.5 4.5 9 0 |
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