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APTM120U10DAG 데이터시트(PDF) 6 Page - Microsemi Corporation |
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APTM120U10DAG 데이터시트(HTML) 6 Page - Microsemi Corporation |
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6 / 6 page ![]() APTM120U10DAG www.microsemi.com 6 – 6 Delay Times vs Current td(on) td(off) 0 50 100 150 200 250 300 30 60 90 120 150 180 ID, Drain Current (A) VDS=800V RG=1.2Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 0 20 40 60 80 100 30 60 90 120 150 180 ID, Drain Current (A) VDS=800V RG=1.2Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0 4 8 12 16 30 60 90 120 150 180 ID, Drain Current (A) VDS=800V RG=1.2Ω TJ=125°C L=100µH Eon Eoff Eoff 4 8 12 16 20 24 024 68 Gate Resistance (Ohms) Switching Energy vs Gate Resistance VDS=800V ID=116A TJ=125°C L=100µH Hard switching ZCS 0 25 50 75 100 125 150 175 30 50 70 90 110 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=800V D=50% RG=1.2Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Source to Drain Diode Forward Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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