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APTM120U10DAG 데이터시트(PDF) 1 Page - Microsemi Corporation

부품명 APTM120U10DAG
상세설명  Single switch with Series diodes MOSFET Power Module
PDF  6 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120U10DAG 데이터시트(HTML) 1 Page - Microsemi Corporation

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APTM120U10DAG
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SK
DK
G
SD
D
S
G
SK
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
116
ID
Continuous Drain Current
Tc = 80°C
86
IDM
Pulsed Drain current
464
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
120
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
3290
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3200
mJ
VDSS = 1200V
RDSon = 100mΩ typ @ Tj = 25°C
ID = 116A @ Tc = 25°C
Application
•
Zero Current Switching resonant mode
Features
•
Power MOS 7® MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
•
Kelvin source for easy drive
•
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
•
High level of integration
•
AlN substrate for improved thermal performance
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Low profile
•
RoHS Compliant
Single switch
with Series diodes
MOSFET Power Module


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