January 2008

Rev 2

1/12

12

STW9N150

N-channel 1500 V - 1.8

Ω - 8 A - TO-247

very high voltage PowerMESH™ Power MOSFET

Features

■ 100% avalanche tested

■ Avalanche ruggedness

■ Gate charge minimized

■ Very low intrinsic capacitances

■ High speed switching

■ Very low on-resistance

Application

■ Switching applications

Description

Using the well consolidated high voltage MESH

OVERLAY™ process, STMicroelectronics has

designed an advanced family of Power MOSFETs

with outstanding performances. The strengthened

layout coupled with the company’s proprietary

edge termination structure, gives the lowest

RDS(on) per area, unrivalled gate charge and

switching characteristics.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

ID

Pw

STW9N150

1500 V

< 2.5

Ω

8 A

320 W

1

2

3

TO-247

Table 1.

Device summary

Order code

Marking

Package

Packaging

STW9N150

9N150

TO-247

Tube

www.st.com